yl23455永利

CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
 PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density，having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform；
2. 650V breakdown voltage,Ic=160A@Tc=100℃；
3. Low conduction loss,low switching loss；
4. Copacked with Very?soft,fast?recovery?antiparallel?diode；
SPECIFICATION

DGQ160N65CTS2A

Related new products

IGBT high frequency series C1 module

120V SGT process N-channel MOSFET

Low VCE(sat)?3A?Bipolar?Transistor

P60V MOSFET for Automotive Electronics

MOSFET for High Power DC-DC

LFPAK56D MOSFET for Automotive

Small Signal Schottky and Switching Diode in DFN0603 Package

SOD-323HE SMD Type TVS Products

New plug-in rectifier bridge -JC that follows the trend of flattening

SKBPC75 High Current Three Phase Bridge Rectifiers
网站地图